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| SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * High Gain + Very low saturation voltage APPLICATIONS * Darlington replacement * Relay drivers, DC-DC converters PARTMARKING DETAIL FZT692B FZT692B C E C B ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER SYMBOL MIN. V(BR)CBO 70 V(BR)CEO 70 V(BR)EBO 5 Cut-Off Currents Saturation Voltages ICBO IEBO VCE(sat) VBE(sat) Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Input Capacitance Output Capacitance Switching Times VBE(on) hFE fT Cibo Cobo ton toff 500 400 150 150 200 12 46 1440 MHz pF pF ns ns 0.1 0.1 0.15 0.5 0.5 0.9 0.9 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 70 70 5 5 2 2 -55 to +150 UNIT V V V A A W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C) BreakdownVoltages TYP. MAX. UNIT TEST CONDITIONS. V V V A A IC=100A IC=10mA* IE=100A VCB=55V VEB=4V IC=0.1A, IB=0.5mA* IC=1A, IB=10mA* IC=2A, IB=200mA* IC=1A, IB=10mA* IC=1A, VCE=2V* IC=100mA,VCE=2V* IC=500mA, VCE =2V* IC=1A,VCE=2V* IC=50mA, VCE=5V, f=50MHz VEB=0.5V, f=1MHz VCB=10V, f=1MHz IC=500mA, IB1=50mA IB2=50mA, VCC=10V V V V V V *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 223 FZT692B TYPICAL CHARACTERISTICS 0.8 IC/IB=200 IC/IB=100 IC/IB=10 Tamb=25C 0.8 -55C +25C +100C +175C IC/IB=100 - (Volts) 0.6 0.4 0.2 0 - (Volts) V 0.6 0.4 0.2 0 0.01 0.1 1 I+ - Collector Current (Amps) 10 V 0.01 0.1 1 10 I+ - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC 1.6 - Normalised Gain - Typical Gain - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 00 +100C +25C -55C VCE=2V 1.5K 1K 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -55C +25C +100C +175C IC/IB=100 500 h 0.01 0.1 1 10 h V I+ - Collector Current (Amps) 0.01 0.1 1 I+ - Collector Current (Amps) 10 hFE v IC VBE(sat) v IC 1.6 - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 -55C +25C +100C +175C VCE=2V 10 1 DC 1s 100ms 10ms 1ms 100s 0.1 V I+ - Collector Current (Amps) 0.01 0.1 1 10 0.01 0.1 1 10 100 VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 3 - 224 |
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